2SA1862 Datasheet, PDF (1/3 Pages) Rohm – High-voltage Switching Transistor (-400V, -2A)

Transistors
High-voltage Switching Transistor
(−400V, −2A)
2SA1862
2SA1862
zFeatures
1) High breakdown voltage. (BVCEO = −400V)
2) Low saturation voltage.
(Typ. VCE (sat) = −0.3V at IC / IB = −500mA / −100mA)
3) High switching speed, typically tf = 0.4µs at IC = −1A.
4) Wide SOA (safe operating area).
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗ Single pulse, Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−400
−400
−7
−2
−4
1
10
150
−55 to +150
Unit
V
V
V
A (DC)
A (Pulse) ∗
W
W (Tc=25°C)
°C
°C
zExternal dimensions (Unit : mm)
5.5 1.5
0.9
C0.5
ROHM : CPT3
EIAJ : SC-63
0.8Min.
1.5
2.5
9.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
zPackaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SA1862
CPT3
P
TL
2500
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VCE(sat)
hFE
fT
Cob
ton
tstg
tf
Min.
−400
−400
−7
−
−
−
−
82
−
−
−
−
−
Typ.
−
−
−
−
−
−0.3
−
−
18
30
0.2
1.8
0.4
Max.
−
−
−
−10
−10
−0.5
−1.2
180
−
−
−
−
−
Unit
V
V
V
µA
µA
V
V
−
MHz
pF
µs
µs
µs
Conditions
IC= −50µA
IC= −1mA
IE= −50µA
VCB= −400V
VEB= −5V
IC/IB= −0.5A/ −0.1A
IC/IB= −0.5A/ −0.1A
VCE= −5V, IC= −0.1A
VCB= −10V, IE=0.1A, f=5MHz
VCE= −10V, IE=0A, f=1MHz
IC=−1A, RL=150Ω
IB1=−IB2= −0.2A
VCC −150V
Rev.A
1/2