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2SA1797_1 Datasheet, PDF (1/3 Pages) Rohm – Power Transistor (−50V, −3A) | |||
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Transistors
Power Transistor (â50V, â3A)
2SA1797
2SA1797
zFeatures
1) Low saturation voltage.
VCE (sat) = â0.35V (Max.) at IC / IB = â1A / â50mA.
2) Excellent DC current gain characteristics.
3) Complements the 2SC4672.
zPackaging specifications
Type
2SA1797
Package
hFE
Marking
Code
Basic ordering unit (pieces)
âDenotes hFE
MPT3
PQ
AG â
T100
1000
zExternal dimensions (Unit : mm)
MPT3
4.5
1.6
1.5
(1)
(2)
(3)
0.4
0.4
0.5
0.4
(1)Base
1.5 1.5
3.0
(2)Collector
(3)Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
Collector current
IC
Collector power
dissipation
2SA1797
PC
Junction temperature
Tj
Storage temperature
Tstg
â1 Single pulse, Pw=10ms
â2 When mounted on a 40+ 40+ 0.7mm ceramic board.
Limits
â50
â50
â6
â3
â6
0.5
2
150
â55~+150
Unit
V
V
V
A (DC)
A (Pulse) â1
W
â2
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
â Measured using pulse current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
Typ.
Max.
Unit
Conditions
â50
â
â
V
IC=â50µA
â50
â
â
V
IC=â1mA
â6
â
â
V
IE=â50µA
â
â
â0.1
µA VCB=â50V
â
â
â0.1
µA VEB=â5V
â
â0.15 â0.35
V
IC/IB=â1A/â50mA
â
82
â
270
â
VCE/IC=â2V/â0.5A
â
200
â
MHz VCE=â2V, IE=0.5A, f=100MHz
â
â
36
â
pF VCB=â10V, IE=0A, f=1MHz
Rev.B
1/2
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