2SA1797T100Q Datasheet, PDF (1/3 Pages) Rohm – Power Transistor (−50V, −3A)

Power Transistor (−50V, −3A)
2SA1797
zFeatures
1) Low saturation voltage.
VCE (sat) = −0.35V (Max.) at IC / IB = −1A / 50mA.
2) Excellent DC current gain characteristics.
3) Complements the 2SC4672.
zDimensions (Unit : mm)
MPT3
4.5
1.6
1.5
zPackaging specifications
Type
Package
hFE
Marking ^∗
Code
Basic ordering unit (pieces)
∗Denotes hFE
2SA1797
MPT3
PQ
AG
T100
1000
(1)
(2)
(3)
0.4
0.4
0.5
0.4
(1)Base
1.5 1.5
3.0
(2)Collector
(3)Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
2SA1797
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
∗1
IC
PC ^∗2
Tj
Tstg
Limits
−50
−50
−6
−3
−6
0.5
2
150
−55 to +150
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40⁺ 40⁺ 0.7mm ceramic board.
Unit
V
V
V
A (DC)
A (Pulse)
W
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)^∗
hFE1 ^∗
hFE2 ^∗
fT ^∗
Cob
Min.
Typ.
Max.
Unit
Conditions
−50
−
−
V
IC=−50µA
−50
−
−
V
IC=−1mA
−6
−
−
V
IE=−50µA
−
−
−0.1
µA VCB=−50V
−
−
−0.1
µA VEB=−5V
−
−0.15 −0.35
V
IC/IB=−1A/−50mA
82
−
270
−
VCE/IC=−2V/−0.5A
45
−
−
−
VCE/IC=−2V/−1.5A
−
200
−
MHz VCE=−2V, IE=0.5A, f=100MHz
−
36
−
pF VCB=−10V, IE=0A, f=1MHz
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2009.04 - Rev.C