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2SA1797T100P Datasheet, PDF (1/3 Pages) Rohm – Power Transistor -50V, -3A | |||
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Power Transistor (â50V, â3A)
2SA1797
zFeatures
1) Low saturation voltage.
VCE (sat) = â0.35V (Max.) at IC / IB = â1A / 50mA.
2) Excellent DC current gain characteristics.
3) Complements the 2SC4672.
zDimensions (Unit : mm)
MPT3
4.5
1.6
1.5
zPackaging specifications
Type
Package
hFE
Marking â
Code
Basic ordering unit (pieces)
âDenotes hFE
2SA1797
MPT3
PQ
AG
T100
1000
(1)
(2)
(3)
0.4
0.4
0.5
0.4
(1)Base
1.5 1.5
3.0
(2)Collector
(3)Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
2SA1797
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
â1
IC
PC â2
Tj
Tstg
Limits
â50
â50
â6
â3
â6
0.5
2
150
â55 to +150
â1 Single pulse, Pw=10ms
â2 When mounted on a 40+ 40+ 0.7mm ceramic board.
Unit
V
V
V
A (DC)
A (Pulse)
W
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
â Measured using pulse current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)â
hFE1 â
hFE2 â
fT â
Cob
Min.
Typ.
Max.
Unit
Conditions
â50
â
â
V
IC=â50µA
â50
â
â
V
IC=â1mA
â6
â
â
V
IE=â50µA
â
â
â0.1
µA VCB=â50V
â
â
â0.1
µA VEB=â5V
â
â0.15 â0.35
V
IC/IB=â1A/â50mA
82
â
270
â
VCE/IC=â2V/â0.5A
45
â
â
â
VCE/IC=â2V/â1.5A
â
200
â
MHz VCE=â2V, IE=0.5A, f=100MHz
â
36
â
pF VCB=â10V, IE=0A, f=1MHz
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âc 2009 ROHM Co., Ltd. All rights reserved.
2009.04 - Rev.C
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