2SA1797 Datasheet, PDF (1/3 Pages) Rohm – Power Transistor (-50V, -3A)

Transistors
Power Transistor (−50V, −3A)
2SA1797
2SA1797
zFeatures
1) Low saturation voltage. VCE (sat) = −0.35V (Max.) at IC / IB = −1A / −50mA.
2) Excellent DC current gain characteristics.
4) Complements the 2SA1797 and 2SC4672.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
Collector current
IC
Collector power
dissipation
2SA1797
PC
Junction temperature
Tj
Storage temperature
Tstg
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40⁺ 40⁺ 0.7mm ceramic board.
Limits
−50
−50
−6
−3
−6
0.5
2
150
−55~+150
Unit
V
V
V
A (DC)
A (Pulse) ^∗1
W
∗2
°C
°C
zPackaging specifications and hFE
Type
2SA1797
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗Denotes hFE
MPT3
PQ
AG ^∗
T100
1000
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
Typ. Max.
Unit
Conditions
−50
−
−
V
IC=−50µA
−50
−
−
V
IC=−1mA
−6
−
−
V
IE=−50µA
−
−
−0.1
µA VCB=−50V
−
−
−0.1
µA VEB=−5V
−
−0.15 −0.35
V
IC/IB=−1A/−50mA
∗
82
−
270
−
VCE/IC=−2V/−0.5A
−
200
−
MHz VCE=−2V, IE=0.5A, f=100MHz
∗
−
36
−
pF VCB=−10V, IE=0A, f=1MHz
Rev.A
1/2