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2SA1774EB_09 Datasheet, PDF (1/3 Pages) Rohm – General Purpose Transistor (50V, 0.15A) | |||
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General Purpose Transistor (50V, 0.15A)
2SA1774EB
ï¬Applications
General purpose small signal amplifier.
ï¬Features
1) Excellent hFE linearity.
2) Complements the 2SC4617EB.
ï¬Structure
PNP silicon epitaxial.
planar transistor.
ï¬Dimensions (Unit : mm)
EMT3F
1.6
0.7
0.26
(3)
(1) Base
(2) Emitter
(3) Collector
â = Denotes hFE
(1)
(2)
0.5 0.5
0.13
1.0
Each lead has same dimensions
Abbreviated symbol : Fâ
ï¬Absolute maximum (Ta=25ï°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
â1 Pw=1ms Single pulse
â2 Each terminal mounted on a recommended land
Symbol
Limits
Unit
VCBO
â60
V
VCEO
â50
V
VEBO
â6
V
IC
â150
mA
ICP â1
â200
PD â2
150
mW
Tj
150
°C
Tstg
â55 to +150
°C
ï¬Electrical characteristics (Ta=25ï°C)
Parameter
Symbol Min.
Collector-emitter breakdown voltage BVCEO â50
Collector-base breakdown voltage BVCBO â60
Emitter-base breakdown voltage
BVEBO â6
Collector cutoff current
ICBO
â
Emitter cutoff current
IEBO
â
Collector-emitter saturation voltage VCE(sat) â
DC current gain
hFE
120
Transition frequency
Output capacitance
fT
â
Cob
â
Typ.
â
â
â
â
â
â
â
140
4.0
Max.
â
â
â
â100
â100
â0.5
390
â
5.0
Unit
V
V
V
nA
nA
V
â
MHz
pF
Conditions
IC=â1mA
IC=â50μA
IE=â50μA
VCB=â60V
VEB=â6V
IC/IB=â50mA/â5mA
VCE=â6V, IC=â1mA
VCE=â12V, IE=2mA, f=100MHz
VCE=â12V, IE=0A, f=1MHz
hFE rank categories
Rank
Q
R
hFE
120 to 270 180 to 390
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âc 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.C
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