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2SA1759_1 Datasheet, PDF (1/4 Pages) Rohm – High-voltage Switching Transistor (Camera strobes and Telephone, Power supply) (−400V, −0.1A) | |||
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Transistors
2SA1759
High-voltage Switching Transistor
(Camera strobes and Telephone, Power supply)
(â400V, â0.1A)
2SA1759
zFeatures
1) High breakdown voltage. (BVCEO = â400V)
2) Low saturation voltage,
typically VCE (sat)= â0.2V at IC / IB = â20mA / â2mA.
3) High switching speed, typically tf = 1µs at Ic =100mA.
4) Wide SOA (safe operating area).
5) Complements the 2SC4505.
zDimensions (Unit : mm)
MPT3
4.5
1.6
1.5
(1)
(2)
(3)
0.4
0.4
0.5
0.4
(1)Base
1.5 1.5
3.0
(2)Collector
(3)Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
Collector current
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
â1 Single pulse, Pw=100ms
â2 When mounted on a 40Ã40Ã0.7 mm ceramic board.
Limits
â400
â400
â7
â0.1
â0.2
0.5
2
â2
150
â55 to +150
Unit
V
V
V
A(DC)
A(Pulse) â1
W
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
ton
tstg
tf
â400
â400
â7
â
â
â
â
82
â
â
â
â
â
â
â
â
â
â
â0.2
â
â
12
13
0.7
1.8
1
â
â
â
â10
â10
â0.5
â1.5
180
â
â
â
â
â
V
V
V
µA
µA
V
V
â
MHz
pF
µs
µs
µs
IC= â50µA
IC= â1mA
IE= â50µA
VCB= â400V
VEB= â6V
IC= â20mA, IB= â2mA
IC= â20mA, IB= â2mA
VCE= â10V , IC= â10mA
VCE= â10V , IE=10mA , f=5MHz
VCB= â10V , IE=0A , f=1MHz
IC= â100mA RL=1.5kâ¦
IB1= âIB2= â10mA
VCC~ â150V
Rev.B
1/3
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