2SA1759 Datasheet, PDF (1/4 Pages) Rohm – High-Voltage Switching Transistor(Camera strobes and Telephone, Power supply)

Transistors
2SA1759
High-voltage Switching Transistor
(Camera strobes and Telephone, Power supply)
(−400V, −0.1A)
2SA1759
zFeatures
1) High breakdown voltage. (BVCEO = −400V)
2) Low saturation voltage,
typically VCE (sat)= −0.2V at IC / IB = −20mA / −2mA.
3) High switching speed, typically tf = 1µs at Ic =100mA.
4) Wide SOA (safe operating area).
5) Complements the 2SA4505.
zExternal dimensions (Unit : mm)
MPT3
4.5
1.6
1.5
(1)
(2)
(3)
0.4
0.4
0.5
0.4
(1)Base
1.5 1.5
3.0
(2)Collector
(3)Emitter
zAbsolute maximum ratings (Ta=25_°C)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
Collector current
IC
Collector power dissipation
PC
Junction temperature
Storage temperature
Tj
Tstg
∗1 Single pulse, Pw=100ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
Limits
−400
−400
−7
−0.1
−0.2
0.5
2
∗2
150
−55 to +150
Unit
V
V
V
A(DC)
A(Pulse) ∗1
W
°C
°C
zElectrical characteristics (Ta=25_°C)
Parameter
Symbol
Min.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
ton
tstg
tf
−400
−400
−7
−
−
−
−
82
−
−
−
−
−
Typ.
−
−
−
−
−
−0.2
−
−
12
13
0.7
1.8
1
Max.
−
−
−
−10
−10
−0.5
−1.5
180
−
−
−
−
−
Unit
V
V
V
µA
µA
V
V
−
MHz
pF
µs
µs
µs
Conditions
IC= −50µA
IC= −1mA
IE= −50µA
VCB= −400V
VEB= −6V
IC= −20mA, IB= −2mA
IC= −20mA, IB= −2mA
VCE= −10V , IC= −10mA
VCE= −10V , IE=10mA , f=5MHz
VCB= −10V , IE=0A , f=1MHz
IC= −100mA RL=1.5kΩ
IB1= −IB2= −10mA
VCC~ −150V
Rev.A
1/3