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2SA1515S_10 Datasheet, PDF (1/4 Pages) Rohm – Medium Power Transistor (-32V,-1A) | |||
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Medium Power Transistor (ï32V,ï ï1A)
2SA1515S / 2SB1237
ï¬Features
1) Low VCE(sat).
VCE(sat) = ï0.2V(Typ.)
(IC / IB = ï500mA / ï50mA)
2) Compliments 2SD1858
ï¬Structure
Epitaxial planar type
PNP silicon transistor
ï¬Dimensions (Unit : mm)
2SA1515S
4 +â 0.2
2 +â 0.2
2SB1237
6.8+â 0.2
2.5+â 0.2
0.45
+0.15
â0.05
2.5
+0.4
â0.1
0.5
0.45
+0.15
â0.05
5
(1) (2) (3)
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
0.65Max.
0.5+â 0.1
(1) (2) (3)
2.54 2.54
ROHM : ATV
1.05
0.45+â 0.1
(1) Emitter
(2) Collector
(3) Base
ï¬Absolute maximum ratings (Ta=25ï°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
â40
V
Collector-emitter voltage
VCEO
â32
V
Emitter-base voltage
VEBO
â5
V
Collector current
â1
A(DC)
IC
â2 â1
A(Pulse)
Collector power 2SA1515S
dissipation
2SB1237
PC
0.3
W
1 â2
Junction temperature
Tj
150
C
Storage temperature
Tstg
â55 to +150
C
â1 Single pulse, Pw=100ms
â2 Printed circuit board, 1.7 mm thick, collector copper plating 100mm2 or larger.
ï¬Electrical characteristics (Ta=25ï°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO â40
â
â
V IC= â50μA
Collector-emitter breakdown voltage
BVCEO â32
â
â
V IC= â1mA
Emitter-base breakdown voltage
Collector cutoff current
BVEBO â5
ICBO
â
â
â
V IE= â50μA
â â0.5 μA VCB= â20V
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
IEBO
â
â â0.5 μA VEB= â4V
VCE(sat)
â
â0.2 â0.5
V
IC/IB= â500mA/â50mA
â
hFE
120
â
390
â VCE= â3V, IC= â0.1A
â
fT
â 150 â MHz VCE= â5V, IE=50mA, f=30MHz
Output capacitance
â Measured using pulse current.
Cob
â
20 30 pF VCB= â10V, IE=0A, f=1MHz
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âc 2010 ROHM Co., Ltd. All rights reserved.
2010.04 - Rev.D
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