2SA1036K_09 Datasheet, PDF (1/3 Pages) Rohm – Medium Power Transistor

Medium Power Transistor
2SA1036K
Features
1) Large I_C.
I_CMAX. = -500mA
2) Low V_CE(sat). Ideal for low-voltage
operation.
3) Complements the 2SC2411K.
Structure
Epitaxial planer type
PNP silicon transistor
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
∗PC MAX. must not be exceeded.
Tstg
Limits
−40
−32
−5
−0.5
0.2
150
−55 to +150
Unit
V
V
V
A∗
W
°C
°C
Dimensions (Unit : mm)
2SA1036K
2.9±0.2
1.9±0.2 ^±
0.95 0.95
(1)
(2)
1.1
+0.2
-0.1
0.8±0.1
0~0.1
(3)
0.4
+0.1
-0.05
All terminals have
same dimensions
ROHM : SMT3
EIAJ : SC-59
0.15
+0.1
-0.06
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : H ∗
∗ Denotes hFE
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO −40
Collector-emitter breakdown voltage BVCEO −32
Emitter-base breakdown voltage
BVEBO −5
Collector outoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE
120
Transition frequency
fT
−
Output capacitance
Cob
−
Typ.
−
−
−
−
−
−
−
200
7
Max.
−
−
−
−1
−1
−0.6
390
−
−
Unit
V
V
V
μA
μA
V
−
MHz
pF
Conditions
IC= −100μA
IC= −1mA
IE= −100μA
VCB= −20V
VEB= −4V
IC/IB= −300mA/−30mA
VCE= −3V, IC= −100mA
VCE= −5V, IE=20mA, f=100MHz
VCB= −10V, IE=0A, f=1MHz
Packaging specifications
Package
Code
Type
hFE Basic ordering unit (pieces)
2SA1036K QR
Taping
T146
3000
h_FE values are classifies as follows.
Item
Q
R
hFE
120 to 270 180 to 390
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2009.12 - Rev.B