2SA1036K Datasheet, PDF (1/4 Pages) Rohm – Medium Power Transistor

Transistors
Medium Power Transistor
2SA1036K
zFeatures
1) Large I_C.
I_CMAX. = -500mA
2) Low V_CE(sat). Ideal for low-voltage
operation.
3) Complements the 2SC2411K.
zStructure
Epitaxial planer type
PNP silicon transistor
zExternal dimensions (Unit : mm)
2SA1036K
2.9±0.2
1.9±0.2 ^±
0.95 0.95
(1)
(2)
1.1
+0.2
-0.1
0.8±0.1
0~0.1
(3)
0.4
+0.1
-0.05
All terminals have
same dimensions
ROHM : SMT3
EIAJ : SC-59
0.15
+0.1
-0.06
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : H ∗
∗ Denotes hFE
2SA1036K
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗PC MAX. must not be exceeded.
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−40
−32
−5
−0.5
0.2
150
−55 to +150
Unit
V
V
V
A∗
W
°C
°C
Rev.A
1/3