1SS400G Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – High Speed SWITCHING Diodes

Diodes
Switching diode
1SS400G
zApplications
High frequency switching
zFeatures
1) Ultra small mold type. (VMD2)
2) High reliability.
zConstruction
Silicon epitaxial planar
1SS400G
zExternal dimensions (Units : mm)
0.6±0.05
0.27±0.03
CATHODE MARK
0.13±0.03
ROHM : VMD2
EIAJ : -
JEDEC : -
0.5±0.05
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Peak reverse voltage
VRM
90
V
DC reverse voltage
VR
80
V
Peak forward current
IFM
225
mA
Mean rectifying current
IO
100
mA
Surge current (1s)
Isurge
500
mA
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55~+150
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
VF
−
−
1.2
V
IF=100mA
Reverse current
IR
Capacitance between terminals
CT
Reverse recovery time
trr
−
−
100
nA VR=80V
−
−
3.0
pF VR=0.5V , f=1MHz
−
−
4.0
ns
VR=6V , IF=10mA , RL=100Ω
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