1SS356_1 Datasheet, PDF (1/4 Pages) Rohm – Band switching diode

Diodes
Band switching diode
1SS356
1SS356
zApplications
High frequency switching
zFeatures
1) Small mold type. (UMD2)
2) High reliability.
zConstruction
Silicon epitaxial planar
zDimensions (Unit : mm)
zLand size figure (Unit : mm)
1.25±0.1
0.1±0.1
　　　 0.05
0 .9 M IN .
0.3±0.05
0.7±0.2
　　　 0.1
ROHM : UMD2
JEDEC : S0D-323
JEITA : SC-90/A
dot (year week factory)
zTaping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
UMD2
zStructure
0.3±0.1
1.40±0.1
4.0±0.1
φ1.05
zAbsolute maximum ratings (Ta=25°C)
Param eter
Forward current (DC)
Revers e voltage (DC)
Junction tem perature
Storage tem perature
Sym bol
I_F
V_R
Tj
Ts tg
Lim its
100
35
125
-55 to _＋125
1.0±0.1
Unit
mA
V
℃
℃
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
Reverse current
I_R
Capacitance between terminals Ct
-
-
1.0
-
-
10
-
-
1.2
Forward operating resistance
rf
-
-
0.9
Unit
Conditions
V
I_F=10mA
nA
V_R=25V
pF
V_R=6V , f=1MHz
Ω
I_F=2mA , f=100MHz
Rev.C
1/3