1SS356TW11 Datasheet, PDF (1/6 Pages) Littelfuse – Band Switching Diode

Band Switching Diode
1SS356
Applications
High frequency switching
Dimensions (Unit : mm)
1.25±0.1
0.1±0.1
　　　 0.05
Features
1)Ultra small mold type. (UMD2)
2)High reliability
Construction
Silicon epitaxial planar
0.3±0.05
ROHM : UMD2
JEDEC : SOD-323
JEITA : SC-90/A
dot (year week factory)
0.7±0.2
　　　 0.1
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
Land size figure (Unit : mm)
0.9MIN.
UMD2
Structure
0.3±0.1
1.40±0.1
4.0±0.1
φ1.05
1.0±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Forward current (DC)
I_F
100
mA
Reverse voltage (DC)
V_R
35
V
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55 to 125
°C
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
Forward voltage
Reverse current
V_F
-
I_R
-
-
1.0
-
10
Capacitance between terminals
Ct
-
-
1.2
Forward operating resistance
rf
-
-
0.9
Unit
Conditions
V
I_F=10mA
nA
V_R=25V
pF
V_R=6V , f=1MHz
Ω
I_F=2mA , f=100MHz
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2011.08 - Rev.D