1SS133_1 Datasheet, PDF (1/4 Pages) Rohm – Switching diode

Diodes
Switching diode
1SS133
1SS133
zApplications
High speed switching
zExternal dimensions (Unit : mm)
CATHODE BAND (YELLOW)
zFeatures
1) Glass sealed envelope. (MSD)
2) High reliability.
zConstruction
Silicon epitaxial planar
291
2.70.3
ROHM : MSD
JEDEC : DO-34
zTaping specifications (Unit : mm)
H2
A
BLUE
E
L1
H1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak) V_RM
Reverse voltage (DC)
V_R
Forward voltage (repetitive peak)
I_FM
Average rectified forward current
Io
Surge current (1s)
Power dissipation
I_surge
P
Junction temperature
Tj
Storage temperature
Tstg
Limits
90
80
400
130
600
300
175
-65 to 175
L2
F
Unit
V
V
mA
mA
mA
mW
℃
℃
φ0.40.1
291
φ1.80.2
BROWN
Symbol
Standard dimension
value(mm)
T-72 52.4±1.5
Ａ _{T-77 26.0} +0.4
0
B
C
D
B ^{T-72 5.0±0.5}
T-77 5.0±0.3
C ^T-72 1.0 max.
T-77
D ^T-72
0
T-77
E ^{T-72 1/2A±1.2}
T-77 1/2A±0.4
Ｆ ^{T-72 0.7 max.}
T-77 0.2 max.
H1 ^T-72 6.0±0.5
T-77
H2 ^T-72 5.0±0.5
T-77
|L1-L2| ^T-72
T-77
1.5 max.
0.4 max.
＊H1(6mm)：BROWN
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
-
-
1.2
Reverse current
I_R
-
-
0.5
Capacitance between terminal
Ct
-
-
2
Reverse recovery time
Trr
-
-
4.0
Unit
Conditions
V
I_F=100mA
µA
V_R=80V
pF
V_R=0.5V , f=1MHz
ns
V_R=6V,I_F=10mA,RL=50Ω,Irr=1/10 I_R
Rev.C
1/3