1SS133 Datasheet, PDF (1/4 Pages) Rohm – Switching diode

Diodes
Switching diode
1SS133
1SS133
zApplications
High speed switching
zExternal dimensions (Unit : mm)
CATHODE BAND (YELLOW)
zFeatures
1) Glass sealed envelope. (MSD)
2) High reliability.
291
2.70.3
φ0.40.1
291
φ1.80.2
zConstruction
Silicon epitaxial planar
ROHM : MSD
JEDEC : DO-34
zTaping specifications (Unit : mm)
H2
A
BLUE
L1
H1
G1
G2
E
L2
F
IVORY
H2
M記a号rk
S寸tan法dard規dim格ens値ion
value (mmmm) )
I
T-72 52.4±1.5
Ａ T-77 26.0+0.4
'-0
B
ï¼¢
5.0±0.5
ï¼£
0.5ＭＡＸ
C
Ｄ
0
ï¼¥
50.4±0.4
Ｆ
0.3ＭＡＸ
G1
0.1ＭＩＮ
G2
0ＭＩＮ
H1
6.0±0.5
H2
5.0±0.5
I
0.5ＭＡＸ
L1-L2 0.6ＭＡＸ
t
3.2MIN
H1
D
t
＊H2(6mm)：BROWN
cf : 注cu)m　u累la積tivピeッpチitcのh 許tol容era差ncはe2w0iピthッ2チ0 でpit±ch1t.5hmanm±以1下.5mとmする
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak) V_RM
90
V
Reverse voltage (DC)
V_R
80
V
Forward voltage (repetitive peak)
I_FM
400
mA
Average rectified forward current
Io
130
mA
Surge current (1s)
Power dissipation
I_surge
600
P
300
mA
mW
Junction temperature
Tj
175
℃
Storage temperature
Tstg
-65 to 175
℃
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
-
-
1.2
Reverse current
I_R
-
-
0.5
Capacitance between terminal
Ct
-
-
2
Reverse recovery time
Trr
-
-
4.0
Unit
Conditions
V
I_F=100mA
µA
V_R=80V
pF
V_R=0.5V , f=1MHz
ns
V_R=6V,I_F=10mA,RL=50Ω,Irr=1/10 I_R
Rev.B
1/3