1N4148 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diodes

Diodes
Switching diode
1N4148 / 1N4150 / 1N4448 / 1N914B
1N4148 / 1N4150 / 1N4448 / 1N914B
∗This product is available only outside of Japan.
!Applications
High-speed switching
!External dimensions (Units : mm)
!Features
1) Glass sealed envelope. (GSD)
2) High speed.
3) High reliability.
!Construction
Silicon epitaxial planar
C
29±1
CATHODE BAND (BLACK)
Type No.
φ 0.5±0.1
3.8±0.2
A
29±1
φ 1.8±0.2
ROHM : GSD
EIAJ : −
JEDEC : DO-35
!Absolute maximum ratings (Ta = 25°C)
Type
VRM
VR
IFM
IO
IF
IFSM
1µs
P
Tj
(V)
(V)
(mA) (mA) (mA)
(A)
(mW) (°C)
Topr
(°C)
Tstg
(°C)
1N4148
100
75
450
150
200
2
500
200 −65~+200 −65~+200
1N4150
50
50
600
200
250
4
500
200 −65~+200 −65~+200
1N4448
(1N914B)
100
75
450
150
200
2
500
200 −65~+200 −65~+200
!Electrical characteristics (Ta = 25°C)
Type
@@@
0.1mA 0.25mA 1mA
@
2mA
VF (V)
BV (V) Min.
@@@@@@@@@@
5mA 10mA 20mA 30mA 50mA 100mA 200mA 250mA 5µA 100µA
IR (µA) Max.
Cr (pF)
@25°C
@150°C _VR=0
VR (V)
VR (V) ^f=1MHz
trr (ns)
VR=6V
IF=10mA
RL=100Ω
1N4148
1N4150
1N4448
(IN914B)
0.54
0.62
1.0
0.66
0.74
0.62
0.72
0.76 0.82 0.87
0.86 0.92 1.0
1.0
0.025 20
75 100
50.0 20
4
4
5.0 75
−
50 0.1 50 100.0 50
2.5
4
0.025 20
− 100
50.0 20
4
4
5.0 75
The upper figure is the minimum VF and the lower figure is the maximum VF value.