R1151N Datasheet, PDF (4/26 Pages) RICOH electronics devices division – Boost type Voltage Regulator with Reset

R1151N
ELECTRICAL CHARACTERISTICS
• R1151NxxxA/B
Symbol
VOUT
IOUT
∆VOUT/∆IOUT
VDIF
ISS
Istandby
IEXTleak
∆VOUT/∆VIN
RR
VIN
∆VOUT/∆T
Ilim
IRPT
RUD
VCEH
VCEL
-VDET
VHYS
IOUT2
∆VDET/∆T
tPLH
VDDL
Item
Output Voltage
Output Current
Load Regulation
Dropout Voltage
Supply Current
Supply Current (Standby)
EXT Leakage Current
Line Regulation
Ripple Rejection
Input Voltage
Output Voltage
Temperature Coefficient
Current Limit
Short Current Limit
CE /CE Pull-up/down Resistance
CE /CE Input Voltage "H"
CE /CE Input Voltage "L"
Detector Threshold
Detector Threshold
Hysteresis Range
Output Current 2
Detector Threshold
Temperature Coefficient
Output Delay Time
Minimum Operating Voltage
Conditions
VIN = Set VOUT+1V
IOUT = 50mA
VIN - VOUT = 1.0V
VIN = Set VOUT+1V
1mA ≤ IOUT ≤ 100mA
IOUT = 100mA
VIN = Set VOUT+1V, IOUT = 0mA
VIN = 18.5V
Set VOUT+0.5V ≤ VIN ≤ 18.5V
IOUT = 50mA
f = 1kHz, Ripple 0.5Vp-p
VIN = Set VOUT+1V
IOUT = 10mA
-40°C ≤ Topt ≤ 85°C
Base Current IB of PNP Tr.
VIN - VOUT = 1.0V
Base Current IB of PNP Tr.
VOUT = 0V
VDD = 1.5V, VDS = 0.5V
-40°C ≤ Topt ≤ 85°C
Min.
VOUT
×0.98
Typ.
1^Note
Topt=25°C
Max.
Unit
VOUT
V
×1.02
A
Refer to the Load Regulation Table
0.1^Note
0.2
V
70
100
µA
15
µA
0.5
µA
0.00
0.02
0.10
%/V
60
dB
18.5
V
ppm
±100
/°C
8
27
mA
0.7
mA
2
MΩ
1.5
VIN
V
0.00
0.25
V
-VDET
×0.975
-VDET
V
×1.025
-VDET
-VDET
-VDET
V
×0.03
×0.05
×0.07
2.0
5.0
10.0
mA
ppm
±100
/°C
0.1
ms
0.9
1.1
V
Note: This item depends on the capability of external PNP transistor. Use low saturation type transistor with
hFE value range of 100 to 300.
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