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R1280D002X Datasheet, PDF (23/26 Pages) RICOH electronics devices division – 2CH PWM DC/DC Controller 
s TYPICAL APPLICATION AND TECHNICAL NOTES
q R1280D002A/C
VOUT1
L1
C1
R1
R2
C3
C6 NMOS
C9
R7
R5
C4
R11
R8
EXT1 EXT2
GND VIN
AMPOUT1
Vrefout
DTC1 DTC2
C5
VFB1 V FB2
R9
R10
C7
C8
R3
R4
PMOS
L2
Diode
VOUT2
R6
C2
External Components
Inductor L1,2: 6.8µH, LDR655312T(TDK) for A type, 22µH for C type
Diode: FS1J3 (Origin Electronics)
NMOS: IR7601 (International Rectifier)
PMOS: Si3443 (Siliconix)
Resistors: R1, R2, R3, R4 for Setting Output Voltage. Recommendation values are R1+R2≤100kΩ or R3+R4≤100kΩ
R5=43kΩ, R6=10kΩ, R7=R9=22kΩ, R8=R10=43kΩ, R11=220kΩ
Capacitors: Ceramic Capacitor
(Example)
R1280D002A: C1=C2=10µF, C3=4.7µF, C4=0.22µF, C5=0.47µF, C6=120pF, C7=50pF, C8=1µF, C9=1000pF
R1280D002C: C1=C2=10µF, C3=4.7µF, C4=0.22µF, C5=0.47µF, C6=220pF, C7=330pF, C8=1µF, C9=1000pF
Note: Maximum voltage tolerance of each component should be considered. With the transistor shown above is
appropriate to set up to ±15V as output voltage.
q R1280D002B
VOUT1
L1
C1
R1
R2
C3
C6 NMOS
EXT1EXT2
GND VIN
CE
DTC1DTC2
R5
C4
C5
PMOS
C8
L2
R3
VFB1
VFB2
Diode
C7
R4
R6
Rev. 1.10
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