DS6257AB Datasheet, PDF (6/15 Pages) –

RT6257A/B
Parameter
Symbol
Feedback Voltage
Feedback Voltage
VFB
Feedback Current
IFB
Internal MOSFET
Switch-On Resistance
Discharge FET RON
High-Side
Low-Side
RDS(ON)_H
RDS(ON)_L
RDISCHG
Current Limit
Hide-Side Switch Current Limit
ILIM_H
Low-Side Switch Valley Current Limit ILIM_L
Switching Frequency
Switching Frequency
fSW
On-Time Timer Control
Minimum On-Time
Minimum Off-Time
tON(MIN)
tOFF(MIN)
Thermal Shutdown
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
TSD
TSD
Output Under Voltage
UVP Trip Threshold
Conditions
Min Typ Max Unit
VFB = 4V
0.594 0.6 0.606 V
50
50
nA
VBOOT  VLX = 4.8V
--
30
--
m
--
20
--
m
--
50
--

--
11
--
A
6.3
8.5 10.7
A
400 500 600 kHz
VIN = VIN(MAX)
--
60
--
ns
--
200
--
ns
--
150
--
C
--
15
--
C
UVP detect
Hysteresis
--
60
--
%
--
10
--
%
Note 1. Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may affect
device reliability.
Note 2. θJA is measured under natural convection (still air) at TA = 25°C with the component mounted on a high effective-
thermal-conductivity four-layer test board on a JEDEC 51-7 thermal measurement standard. The first layer is filled with
copper. θJC is measured at the lead of the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
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6
is a registered trademark of Richtek Technology Corporation.
DS6257A/B-00 September 2016