2N4391 Datasheet, PDF (10/14 Pages) Seme LAB – JFET SWITCHING N CHANNEL- DEPLETION

01/99
B-19
2N5114, 2N5115, 2N5116
P-Channel Silicon Junction Field-Effect Transistor
Â¥ Analog Switches
Absolute maximum ratings at T_A = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
– 40 V
Gate Current
50 mA
Continuous Device Power Dissipation
500mW
Power Derating
3 mW/°C
Storage Temperature Range
– 65°C to + 200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
Drain Cutoff Current
Drain Source ON Voltage
Static Drain Source ON Resistance
Dynamic Electrical Characteristics
Drain Source ON Resistance
Common Source Input Capacitance
Common Source Reverse
Transfer Capacitance
Switching Characteristics
Turn ON Delay Time
Rise Time
Turn OFF Delay Time
Fall Time
V_(BR)GSS
I_GSS
V_GS(OFF)
V_GS(F)
I_DSS
I_D(OFF)
V_DS(ON)
r_DS(ON)
r_ds(on)
C_iss
C_rss
t_d(on)
t_r
t_d(off)
t_f
2N5114
2N5115
2N5116
Min Max Min Max Min Max Unit
30
30
30
V
500
500
500 pA
1
1
1 µA
5 10 3 6 1 4 V
–1
–1
–1 V
– 30 – 90
mA
– 15 – 60 – 5 – 25 mA
– 500
pA
–1
µA
– 500
pA
–1
µA
– 500 pA
– 1 µA
– 1.3
V
– 0.8
V
– 0.6 V
75
100
150 Ω
75
100
150 Ω
25
25
27 pF
7
pF
7
pF
7 pF
6
10
25 ns
10
20
35 ns
6
8
20 ns
15
30
60 ns
Process PJ99
Test Conditions
I_G = – 1µA, V_DS = ØV
V_GS = 20V, V_DS = ØV
V_GS = 20V, V_DS = ØV
V_DS = – 15V, I_G = – 1 nA
V_DS = ØV, I_G = – 1 mA
V_GS = ØV, V_DS = – 18V
V_GS = ØV, V_DS = – 15V
V_DS = – 15V, V_GS = 12 V
V_DS = – 15V, V_GS = 12 V
V_DS = – 15V, V_GS = 7V
V_DS = – 15V, V_GS = 7V
V_DS = – 15V, V_GS = 5V
V_DS = – 15V, V_GS = 5V
V_GS = ØV, I_D = – 15 mA
V_GS = ØV, I_D = – 7 mA
V_GS = ØV, I_D = – 3 mA
V_GS = ØV, I_D = – 1 mA
T_A = 150°C
T_A = 150°C
T_A = 150°C
T_A = 150°C
V_GS = ØV, I_D = ØA
V_DS =– 15V, V_GS = ØV
V_DS = ØV, V_GS = 12V
V_DS = ØV, V_GS = 7 V
V_DS = ØV, V_GS = 5V
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_DD
V_GG
R_L
R_G
I_D(ON)
2N5114 2N5115 2N5116
– 10
–6
–6
V
20
12
8
V
130 910 2000
Ω
100 220
390
Ω
– 15
–7
–3
mA
TOÐ18 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source 1, 2 Gate & Case, 3 Drain
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