SDA-7000 Datasheet, PDF (9/9 Pages) RF Micro Devices – GaAs Distributed Amplifier

SDA-7000
Bias Sequence (Turn Device On):
VTI - Apply negative -2.0 volts. (This shuts the device off.)
VG2 - Apply positive 2.2 volts.
VDD - Apply positive 7.0 volts to the RF output bias tee.
Important - Adjust VTI between -2 to +1.0 volts to achieve IDD = 200mA nominal.
Bias Sequence (Turn Device Off):
VTI - Return to negative -2.0 volts.
VDD - Remove positive 7.0 volts to the RF output bias tee.
VG2 - Remove positive 2.2 volts.
Assembly Diagram
Measurement Technique
All data presented in this document represents the integrated circuit and accompanying bond wires.
All performance data reported in this document were measured in the following manner. Data was taken using a temperature
controlled probe station utilizing 150 μm pitch GSG probes. The interface between the probes and integrated circuit was made
with a coplanar to microstrip ceramic test interface. The test interface was wire bonded to the die using 1 mil diameter bondwires.
The spacing between the test interface and the die was 200 μm, and the bond wire loop height was 100 μm. The calibration of the
test fixture included the probes and test interfaces, so that the measurement reference plane was at the point of bond wire
attachment to the ceramic interface. The presented data therefore represents the chip plus wirebonds.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS140210
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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