RF5111_1 Datasheet, PDF (8/14 Pages) RF Micro Devices – 3V DCS POWER AMPLIFIER

RF5111
Application Schematic
V_CC
1 nF
Instead of a stripline,
an inductor of ~6 nH
can be used
12 pF
Very close to
pin 15/16
V_CC
RF IN
33 pF
1.0 pF
16 15 14 13
1
12
2
11
3
10
V_CC
15 pF
Instead of a stripline, an
inductor of 2.2 nH can
be used
Quarter wave
length
50 Ω μstrip
5.1 pF
Note 1
33 pF
1.0 pF
Note 1
RF OUT
15 pF
Distance between edge of
device and capacitor is
0.240" to improve the "off"
isolation
4
9
5678
Distance between
edge of device and
capacitor is 0.080"
V_CC
Distance center to
center of capacitors
0.220"
15 pF
15 pF
15 pF
APC
Notes:
1. Using a hi-Q capacitor will increase efficiency slightly.
2. All capacitors are standard 0402 multi layer chip.
8 of 14
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Rev A1 DS060921