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SBB5000 Datasheet, PDF (5/6 Pages) RF Micro Devices – 0.05GHz to 6GHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER | |||
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SBB5000
Pin Function Description
RF IN
This pad is DC coupled and matched to 50ï. An external DC block is required.
RF OUT
This pad is DC coupled and matched to 50ï. DC bias is applied through this pad.
DIE
Die backside must be connected to RF/DC ground using silver filled conductive epoxy.
Notes:
BACKSIDE
1. All dimensions in inches [millimeters].
2. Die thickness is 0.004 [0.100].
3. Typical bond pad is 0.003x0.006
4. Backside metallization: Gold.
5. Bond pad metallization: Gold.
6. Backside is ground.
Die Dimensions
DS111219
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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