RF5146 Datasheet, PDF (5/18 Pages) RF Micro Devices – QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE

RF5146
Parameter
Overall (DCS Mode)
Operating Frequency Range
Maximum Output Power
Total Efficiency
Input Power Range
Output Noise Power
Forward Isolation 1
Forward Isolation 2
Second Harmonic
Third Harmonic
All Other
Non-Harmonic Spurious
Input Impedance
Input VSWR
Output Load VSWR Stability
Specification
Min.
Typ.
Max.
+32.0
+30.0
0
8:1
1710 to 1785
50
+3
-85
-50
-25
-15
-20
50
+5
-36
2.5:1
Output Load VSWR Ruggedness 10:1
Output Load Impedance
50
Power Control V_RAMP
Power Control Range
50
Notes:
V_RAMP_R_P=V_RAMP set for 32dBm at nominal conditions.
Unit
MHz
dBm
dBm
%
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Ω
Ω
dB
Condition
Temp=25°C, V_BATT=3.5V,
V_RAMP=1.6V, P_IN=3dBm,
Freq=1710MHz to 1785MHz,
25% Duty Cycle, pulse width=1154μs
Temp=25°C, V_BATT=3.5V,
V_RAMP =1.6V
Temp=+85°C, V_BATT=3.0V,
V_RAMP = 1.6 V
At P_{OUT MAX,} V_BATT=3.5V
Maximum output power guaranteed at mini-
mum drive level
RBW=100kHz, 1805MHz to 1880MHz,
P_OUT > 0dBm, V_BATT=3.5V
TXEnable=Low, P_IN=+5dBm
TXEnable=High, V_RAMP=0.2V, P_IN=+5dBm
V_RAMP=0.2V to V_{RAMP_}R_P
V_RAMP=0.2V to V_{RAMP_}R_P
V_RAMP=0.2V to 1.6V
V_RAMP=0.2V to 1.6V
Spurious<-36dBm, RBW=3MHz
Set V_RAMP where P_OUT<32dBm into 50Ω
load
Set V_RAMP where P_OUT<32dBm into 50Ω
load. No damage or permanent degradation
to part.
Load impedance presented at RF OUT pin
V_RAMP=0.2V to 1.6V, P_IN=+5dBm
Rev A1 050928
2-495