ZXT10N50DE6_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – NPN LOW SATURATION SWITCHING TRANSISTOR

ZXT10N50DE6
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter Cutoff Current
Collector-Emitter Cutoff Current
ON CHARACTERISTICS (Note 9)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Turn-Off Time
Symbol Min
BVCBO
50
BVCEO
50
BVEBO
5
ICBO
—
IEBO
—
ICES
—
200
300
hFE
200
100
—
—
—
VCE(SAT)
—
—
VBE(SAT)
—
VBE(ON)
—
fT
100
Cobo
—
t(on)
—
t(off)
—
Typ
190
65
8.3
—
—
—
400
450
400
225
40
14
145
115
225
0.93
0.88
165
12
170
750
Note: 9. Measured under pulsed conditions. Pulse width  300μs. Duty cycle  2%.
Max
—
—
—
100
100
100
—
—
—
—
—
20
200
200
300
1.0
0.95
—
20
—
—
Unit
Test Condition
V I_C = 100µA
V I_C = 10mA
V I_E = 100µA
nA V_CB = 40V
nA V_EB = 4V
nA V_CES = 40V
IC = 10mA, VCE = 2V
IC = 0.2A, VCE = 2V
— I_C = 1A, V_CE = 2V
IC = 2A, VCE = 2V
IC = 6A, VCE = 2V
IC = 0.1A, IB = 10mA
mV ^{IC = 1A, IB = 10mA}
IC = 2A, IB = 50mA
IC = 3A, IB = 100mA
V I_C = 3A, I_B = 100mA
V I_C = 3A, V_CE = 2V
MHz
pF
ns
ns
VCE = 10V, IC = 50mA, f = 100MHz
VCB = 10V, f = 1MHz
VCC = 10V, IC = 1A
IB1 = IB2 = 10mA
ZXT10N50DE6
Document Number: DS33623 Rev. 2 - 2
4 of 7
www.diodes.com
October 2015
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