RF7115_1 Datasheet, PDF (4/22 Pages) RF Micro Devices – QUAD-BAND GSM850/GSM900/DCS/PCS TRANSMIT MODULE

RF7115
Parameter
Specification
Min.
Typ.
Max.
GSM900 Mode
Operating Frequency Range
Maximum Output Power
880
915
33.0
33.5
32.8
31.0
Total Efficiency
Input Power Range
Output Noise Power
35
40
2
4
6
-85
-79
-89
-83
<-100
-87
Forward Isolation 1
-60
-41
Forward Isolation 2
-27
-15
All Harmonics up to 12.75GHz
-40
-35
All Non-Harmonic Spurious
-36
Input VSWR
2.5:1
Output Load VSWR Stability
10:1
Output Load VSWR Ruggedness
20:1
Input and Output Impedance
50
Note: V_{RAMP MAX}=3/8*V_BATT+0.15<1.5V
Unit
MHz
dBm
dBm
dBm
%
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Ω
Condition
Temp=+25°C, V_BATT=3.5V,
V_{RAMP MAX}, P_IN =4dBm,
25% Duty Cycle, Pulse Width=1154μs
25% duty cycle, pulse width 1154us
50% duty cycle, pulse width 2308us
Temp=+85°C, V_BATT=3.0V,
V_RAMP= V_{RAMP MAX}
At P_{OUT MAX}, V_BATT=3.5V
Full output power guaranteed at minimum
drive level
925MHz to 935MHz, RBW=100kHz,
P_OUT > +5 dBm
935MHz to 960MHz, RBW=100kHz,
P_OUT > +5 dBm
1805MHz to 1880MHz, RBW=100kHz,
P_OUT > +5 dBm
TXEnable=Low, P_IN=+6dBm, V_RAMP=0.25V,
B1=High, B2=Low, B3=High
TXEnable=High, P_IN=+6dBm, V_RAMP=0.25V,
B1=High, B2=Low, B3=High
Over all power levels (5dBm to 33dBm)
Over all power levels (5dBm to 33dBm)
Over all power levels (5dBm to 33dBm)
Spurious<-36dBm, set V_RAMP where
P_OUT<33.0dBm into 50Ω load
Set V_RAMP where P_OUT<33.0dBm into 50 Ω
load
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Rev A0 DS060808