TA0012 Datasheet, PDF(3/4 Page) RF Micro Devices – New High Power, High Efficiency HBT GSM Power Amplifier

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TA0012 Datasheet, PDF (3/4 Pages) RF Micro Devices – New High Power, High Efficiency HBT GSM Power Amplifier

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TA0012

Vcc1 1

16 BiasR

GND 2

15 GND

GND 3

14 GND

GND1 4

13 RFout

RFin 5

12 RFout

GND 6

GND 7

BIAS

11 GND

10 GND

Vcc1 8

9 Vpc

Figure 2. Block Diagram and Pinout for RF2123.

lithography is required for this process; thus, mask

alignment and optical resolution is not an issue. Also,

this means wafers can be prepared and stock-piled,

eliminating this step from the critical path of product

manufacturing.

Once the layers are completed, then the lithography

begins. Since all the critical geometries are already de-

fined, the minimum feature size is currently 2mm. This

is much more manufacturable than the 0.5-1.0mm gate

geometries typically required by GaAs MESFETs.

We feel the TRW HBT process is the most reliable

commercially available HBT process in the world. As a

military subcontractor, TRW has qualified the process

for many of their military programs. Additionally TRW,

as a space equipment manufacturer, has qualified the

HBT process for Class S space applications. This level

of ruggedness is absolutely needed for spacecraft,

since it is somewhat difficult to repair a failed compo-

nent in space, but is also demanded by the commercial

marketplace today. RF Micro Devices and TRW have

both been diligently testing the HBT process and prod-

ucts to determine the ruggedness and failure rates.

The MTBF is currently defined to be 4x107 hours at a

junction temperature of 125Â°C. Additional information

is available on the reliability of HBTs, and may be

obtained with the application information package on

the RF2123.

In order to meet the continuing demand for GaAs HBT,

RF Micro Devices has licensed the proprietary TRW

HBT process for commercial wireless applications and

is building a high-volume wafer fab in Greensboro, NC,

to provide the industry with these power amplifiers and

other high-performance ICs. This wafer fab will be the

largest GaAs HBT wafer fab in the world, and will con-

tinue to enforce our dominant position as the leading

supplier of GaAs HBT circuits.

! " #

The block diagram for the RF2123 is shown in Figure

2. The part is a two-stage device with 30dB gain at full

13 power. The drive level required to fully saturate the out-

put is +6dBm. Bias control is provided through a single

pin interface, and the final stage ground is achieved

through the large pins on both sides of the package.

First stage ground is brought out through a separate

ground pin for isolation from the output. These grounds

should be connected directly with vias to the PCB

ground plane. The output is brought out through the

two output pins, and combined off-chip to form the out-

put line.

The amplifier operates in Class AB bias mode. The

final stage is âdeep ABâ, meaning the quiescent current

is extremely low. As the RF drive is increased, the final

stage self-biases, causing the bias point to shift up

and, at full power, draws about 1A. The optimum load

for the output stage is ~3.5W. This is the load at the

output collector, and is created by the series induc-

13-65

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