RFPA2026 Datasheet, PDF (3/25 Pages) RF Micro Devices – 3-Stage Power Amplifier Module, 2W 700MHz to 2700MHz

RFPA2026
Parameter
728MHz to 768MHz
Detector Output Voltage
Input Return Loss
Output Return Loss
Noise Figure
2.11GHz to 2.17GHz
Frequency
Input Power (PIN)
Gain
ACPR
P1dB
Output IP3
Detector Output Voltage
Input Return Loss
Output Return Loss
Noise Figure
2.58GHz to 2.69GHz
Frequency
Input Power (PIN)
Gain
ACPR
P1dB
Output IP3
Detector Output Voltage
Input Return Loss
Output Return Loss
Noise Figure
Power Supply
Amp1 Quiescent Current
Amp2 Quiescent Current
Amp3 Quiescent Current
VBIAS
Specification
Unit
Min Typ Max
Condition
VCC = 5.0V, Temp = 25°C, Optimized for -45dBc ACPR
at rated power
1.1
V CW RF output power = 24dBm with 0.3pF coupling capacitor
20
dB
20
dB
4.5
dB
VCC = 5.0V, Temp = 25°C, Optimized for -45dBc ACPR
at rated power
2.14
GHz
0 dBm Max recommended continuous input power, V_CC = 5.0V, Load VSWR = 2:1
34 38 42 dB
-48 -42 dBc RF Output Power = 24dBm, WCDMA 3GPP 3.5, test model 1, 64 DPCH
33
dBm
46
dBm At 21dBm per tone, 1MHz spacing with WCDMA ACPR tune
1.0
V CW RF output power = 24dBm with 0.2pF coupling capacitor
17
dB
25
dB
5.2
dB
VCC = 5.0V, Temp = 25°C, Optimized for -45dBc ACPR
at rated power
2.65
GHz
-5 dBm Max recommended continuous input power, V_CC = 5.0V, Load VSWR = 2:1
37
dB
-48
dBc RF Output Power = 24dBm, WCDMA 3GPP 3.5, test model 1, 64 DPCH
33
dBm
45
dBm At 21dBm per tone, 1MHz spacing with WCDMA ACPR tune
1.1
V CW RF output power = 24dBm with 0.2pF coupling capacitor
16
dB
11
dB
5.6
dB
Temp = 25°
37
48
57
mA _{At VCC1 = VBIAS = 5V, VPC_EN = 1.8V, off for 750MHz band}
90 115 130 mA At V_CC2 = V_BIAS = 5V, VPC_EN = 1.8V
420 460 525 mA At V_CC3 = V_BIAS = 5V, VPC_EN = 1.8V
4.75 5 5.25 V V_BIAS = V_CC under normal operating conditions
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS140915
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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