RFLA1018S Datasheet, PDF (3/12 Pages) RF Micro Devices – Variable Gain, Low Noise, High Linearity Amplifier 1920MHz to 1980MHz

RFLA1018S
Parameter
General Performance -
Continued
Reverse Isolation
Output Return Loss
S11 Phase Variation
General Performance
Operating Frequency
Max Gain
Gain Flatness
Gain Range
Output IP3
Input IP3
Output P1dB (Max Gain)
Input P1dB
Noise Figure
Input Return Loss
Output Return Loss
S11 Phase Variation
Power Supply
Supply Voltage
VCTRL Voltage
Logic High
Logic Low
Thermal Resistance
Specification
Unit Condition
Min Typ Max
Electrical Specifications, TA = -40°C to 85°C, VCC = 4.75V to 5.25V,
High Gain Mode, Standard Applications Circuit
60 76
dB 35dB Gain
-22 _-15
dB 19dB to 35dB Gain; Maximum Return Loss specifications can be relaxed 2dB
between -10°C to -40°C
25
100
Deg 1950MHz when input return loss is between 20dB to 25dB over temperature
range from 25° to 85°C
Electrical Specifications, TA = -40°C to 85°C, VCC = 4.75V to 5.25V,
Low Gain Mode, Standard Applications Circuit
1920
1980 MHz
20 22
dB _{Attenuation = Minimum, VCTRL = 0V}
0.4 1
dB
-2.7
20 dB All Conditions
37
14 20
18 22
25
4
10
7
12
dBm
dBm
dBm
dBm
dBm
dBm
Max Gain, Attenuation = Minimum, VCTRL = 0V
12dB to 18dB Gain
3dB to 11dB Gain
Attenuation = Minimum, VCTRL = 0V
12dB to 18dB Gain; Minimum Input P1dB specifications can be relaxed 1dB
between -10°C to -40°C
3dB to 11dB Gain; Minimum Input P1dB specifications can be relaxed 1dB
between -10°C to -40°C
3.8 11.3 dB 18dB Gain
-22 -18
-22 -15
dB _{3dB to 18dB Gain; Maximum return loss specification can be relaxed 2dB}
dB ^{between -10°C and -40°C}
25
100
Deg 1950MHz when input return loss is between 20dB to 25dB over temperature
range from 25° to 85°C
Electrical Specifications, TA = -40°C to 85°C, VCC = 4.75V to 5.25V,
Standard Application Circuit
4.75 5 5.25 V
0
3.3
V
2
5
V
0
1
V
35.5
°C/W _{85°C at 5V; TREF = Backside of Module}
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS141204
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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