RFHA1042 Datasheet, PDF (3/13 Pages) RF Micro Devices – 125W GaN Power Amplifier

RFHA1042
Parameter
Capacitance
CRSS
CISS
COSS
RF Functional Test
VGS
Gain
Drain Efficiency
Input Return Loss
PAR
RF Typical Performance
Gain
Drain Efficiency
Input Return Loss
Adjacent Channel Power
Power Gain
P3dB Power
Saturated Drain Efficiency
Power Gain
P3dB Output Power
Drain Efficiency
Specification
Unit
Min Typ Max
Condition
12.5
pF
160.5
pF VG = -8V, VD = 0V
36
pF
Test Conditions: VDSQ = 48V, IDQ = 600mA, T = 25°C, Performance
in a standard tuned test fixture, ACP: ±1.23MHz at 1.5MHz BW
-3.2
17 18
V VD = 48V, ID = 600mA
dB
35 42
-13.5 -8
% _{IS95 (9 channel model, 9.8dB PAR at 0.01% CCDF), POUT = 45.2dBm,}
dB ^{f = 450MHz}
5
5.7
dB
Test Conditions: VDSQ = 48V, IDQ = 600mA, T = 25°C, Performance
in a standard tuned test fixture, ACP: ±1.23MHz at 1.5MHz BW
20
dB
41
%
3GPP (TM1, 7.5dB PAR at 0.01% CCDF), POUT = 45dBm
-9
dB
-36
dBc
17
dB
51.6
dBm CW, f = 225MHz
75
%
16
dB
50.4
dBm CW, f = 450MHz
47
%
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS131023
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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