RFHA1021L Datasheet, PDF (3/12 Pages) RF Micro Devices – 60W GaN Wide-Band Pulsed Power Amplifier

RFHA1021L
PRELIMINARY
Parameter
Specification
Unit
Min Typ Max
RF Functional Test
Input Return Loss
-15.5 -8
dB
Output Power
47.5 48.3
dBm
Efficiency
46
50
%
Input Return Loss
-12
-8
dB
Output Power
47.5 48.7
dBm
Efficiency
46
50
%
RF Typical Performance
Small Signal Gain
27
dB
Gain Variation with Temperature
TBD dB/°C
Output Power (PSAT)
49.1
dBm
81
W
Drain Efficiency
50
%
Power Gain
23.5
dB
Efficiency
47.5
%
Input Return Loss
-17
-8
dB
Power Gain
24.5
dB
Efficiency
47
%
Input Return Loss
-12
-8
dB
[1] Test Conditions: PW = 100µs, DC = 10%, VDSQ = 50V, IDQ = 264mA, T = 25ºC.
[2] Performance in a standard tuned test fixture.
Condition
f = 2.7GHz, PIN = 25dBm [1,2]
f = 3.1GHz, PIN = 25dBm [1,2]
f = 2.9GHz, PIN = 0dBm [1,2]
At peak output power [1,2]
f = 3.1GHz [1,2]
At peak output power (P3dB, 3100MHz) [1,2]
f = 2.7GHz, POUT = 60W [1,2]
f = 3.1GHz, POUT = 60W [1,2]
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS131203
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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