RFCM3316 Datasheet, PDF (3/8 Pages) RF Micro Devices – 45-1218MHZ GAAS/G POWER DOUBLER MODULE

RFCM3316
Parameter
Distortion data 40MHz to 550MHz
CTB
XMOD
CSO
CIN
Distortion data 40MHz to 550MHz
CTB
XMOD
CSO
CIN
Specification
Min Typ Max
-73
-68
-65
-60
-76
-70
55
60
-80
-78
-80
59
Unit
dBc
dBc
dBc
dB
dBc
dBc
dBc
dB
Condition
V+= 24V; TMB=30°C; ZS=ZL=75Ω; IDC=IDC typical
VO=61dBmV at 1000MHz, 18dB extrapolated tilt, 79 analog
channels plus 75 digital channels (-6dB offset)^[2][4]
V+= 24V; TMB=30°C; ZS=ZL=75Ω; IDC=IDC typical
VO=60dBmV at 1218MHz, 22dB extrapolated tilt, 79 analog
channels plus 111 digital channels (-6dB offset)^[3][4]
1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
2. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +43dBmV to +52.4dBmV tilted output level, plus 75
digital channels, -6dB offset relative to the equivalent analog carrier.
3. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +38dBmV to +47.4dBmV tilted output level, plus 111
digital channels, -6dB offset relative to the equivalent analog carrier.
4. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Composite
Triple Beat (CTB) - The CTB parameter is defined by the NCTA. Cross Modulation (XMOD) - Cross modulation (XMOD) is
measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. Carrier to
Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise).
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
DS141006
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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