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RF2163 Datasheet, PDF (3/6 Pages) RF Micro Devices – 3V, 2.5GHZ LINEAR POWER AMPLIFIER
Preliminary
RF2163
Pin Function Description
Interface Schematic
1
GND
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
2
RF IN
RF input. This input is AC coupled, so an external blocking capacitor is See pin 14.
not required if this pin is connected to a DC path.
3
BIAS GND2 Ground for second stage bias circuit. For best performance, keep
traces physically short and connect immediately to ground plane.
4
PWR SEN The PWR SEN and PWR REF pins can be used in conjunction with an
2
external feedback path to provide an RF power control function for the
RF2163. The power control function is based on sampling the RF drive
to the final stage of the RF2163.
5
PWR REF Same as pin 4.
6
VREG1 This pin requires a regulated supply to maintain the correct bias cur-
rent.
7
VREG2 Same as pin 6.
8
BIAS GND1 Ground for first stage bias circuit. For best performance connect to
ground with a 10nH inductor.
9
GND
Same as pin 1.
10
RF OUT RF output and bias for the output stage. The power supply for the out-
put transistor needs to be supplied to this pin. This can be done
through a quarter-wave length microstrip line that is RF grounded at the
other end, or through an RF inductor that supports the required DC cur-
rents.
RF OUT
11
RF OUT Same as pin 10.
See pin 10.
12
RF OUT Same as pin 10.
See pin 10.
13
NC
Not connected.
14
VCC1
Power supply pin for the bias circuits. External low frequency bypass
capacitors should be connected if no other low frequency decoupling is
nearby.
RF IN
VCC
15
16
Pkg
Base
VCC1
VCC
GND
BIAS
Same as pin 14.
See pin 14.
Same as pin 14.
See pin 14.
Ground connection. The backside of the package should be connected See pin 1 and 2.
to the ground plane through a short path, i.e., vias under the device
may be required.
Rev A2 001221
2-251