SBF5089Z Datasheet, PDF (2/8 Pages) RF Micro Devices – DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER

SBF5089Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current (I_D)
Device Voltage (V_D)
RF Input Power
150
mA
6
V
+19
dBm
Max Operating Dissipated Power
0.8
W
Junction Temp (T_J)
Operating Temp Range (T_L)
Storage Temp
+150
°C
-40 to +85
°C
+150
°C
ESD Rating - Human Body Model
(HBM)
Class 1C
Moisture Sensitivity Level
MSL 2
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I_DV_D<(T_J-T_L)/R_TH, j-l and T_L=T_LEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical RF Performance at Key Operating Frequencies
Parameter
Unit 70MHz 100MHz 240MHz 400MHz 500MHz 850MHz
Small Signal Gain
dB
20.5
20.4
20.1
19.8
19.5
18.2
Output Third Order Intercept Point dBm
39
39
41
39.5
39
34
Output Power at 1dB Compression dBm
21.0
21.0
21.0
20.7
20.8
18.6
Input Return Loss
dB
19.4
19.9
20.1
20.9
22.0
26.8
Output Return Loss
dB
17.2
15.8
18.6
24.0
37.5
15.5
Reverse Isolation
dB
25.2
22.4
22.3
22.3
22.3
22.4
Noise Figure
dB
2.7
2.8
2.7
2.8
2.8
2.8
Test Conditions: V_S=8V, I_D=90mA Typ., OIP₃ Tone Spacing=1MHz, P_OUT per tone=0dBm. T_L=25°C, R_BIAS=33, Z_S=Z_L=50, App circuit.
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DS111011