SBB5082S Datasheet, PDF (2/6 Pages) RF Micro Devices – InGaP HBT Active Bias Gain Block 50MHz to 6000MHz

SBB5082S
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current (ID)
Device Voltage (VD)
RF Input Power
100
mA
5.5
V
+24
dBm
Junction Temperature (TJ)
Operating Temperature Range
+150
°C
-40 to +85
°C
Storage Temperature Range
-55 to +150
°C
Moisture Sensitivity Level
Hermetic
ESD Rating - Human Body Model (HBM)
Class 1C
For reliable continuous operation, the device voltage and current must not exceed the maximum
operating values specified in the Absolute Maximum Ratings table above.
Bias conditions should also satisfy the following expression: IDVD < (TJ-TL) / RTH, j - l
Caution! ESD sensitive device.
RFMD Green: RoHS compliant per EU
Directive 2011/65/EU, halogen free per
IEC 61249-2-21, <1000ppm each of
antimony trioxide in polymeric materials
and red phosphorus as a flame retardant,
and <2% antimony solder.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Nominal Operating Parameters
Parameter
Specification
Unit
Min Typ Max
Condition
General Performance
Test Conditions: VD = 5V, ID = 71mA Typ. OIP3 Tone Spacing =
1MHz, POUT per tone = 0dBm, TL = 25°C, ZS = ZL = 50Ω, Tested with
Bias Tees
Small Signal Gain
18 20 22 dB 1950MHz
17
dB 4GHz
Output Power at 1dB Compression 18 19 22 dBm 1950MHz
OIP3
33 35
dBm F1 = 1950MHz, F2 = 1951MHz
Input Return Loss
Output Return Loss
10 15
13
10 14
8
dB 1950MHz
dB 4GHz
dB 1950MHz
dB 4GHz
Reverse Isolation
Noise Figure
Operating Voltage
Operating Current
17 22.5
dB 1950MHz
4.2 6.0 dB 1600MHz
5.0
V
60 71 92.0 mA
Thermal Resistance
87
°C/W Junction to case
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS131119
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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