RFVC1832A Datasheet, PDF (2/9 Pages) RF Micro Devices – Multiple Frequency Outputs

RFVC1832A
Absolute Maximum Ratings
Parameter
V_{CC_OSC}, V_{CC_DIG}
V_TUNE
Junction Temperature (T_J)
Continuous P_DISS (T_A = 85°C)
(derate 37mW/°C above T_A = 85°C)
Junction to Case,
Thermal Resistance (R_θ(j-a) )
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
Rating
+5.5
0 to +15
135
1.65
30
-65 to +150
-40 to +85
Class 1A
Unit
V
V
°C
W
°C/W
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Parameter
Electrical Specifications
Operating Frequency
Fo
Fo/2
Fo/4
Output Power
Fo
Fo/2
Fo/4
SSB Phase Noise
10kHz offset at RF_OUT
100kHz offset at RF_OUT
Tune Voltage
Supply Voltage (Oscillator and
Divider)
Supply Current
V_{CC_OSC}
V_{CC_DIG}
Tune Port Leakage Current
Output Return Loss
Harmonics/Sub-harmonics
1/2
3/2
2^nd
3^rd
Pulling (into a 2.0:1 VSWR)
Pushing
Frequency Drift Rate
Specification
Min.
Typ.
Max.
7.80
3.90
1.95
1.5
9
5
-2
-90
-115
5
8.90
4.40
2.20
14.5
Unit
Condition
V_CC=5V, T_A=+25 °C
GHz
GHz
GHz
dBm
dBm
dBm
dBc/Hz
dBc/Hz
V
V
V_TUNE = 5 V
V_TUNE = 5 V
180
mA
60
mA
10
A
6
dB
Measured with RF probes at package, not at
SMA connections on EVB
45
dBc
45
dBc
15
dBc
25
dBc
5
MHz pp
21
MHz/V
0.8
MHz/ °C
2 of 9
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DS120518