RFRP2920 Datasheet, PDF (2/3 Pages) RF Micro Devices – Si Reverse Hybrid

RFRP2920
Nominal Operating Parameters
Parameter
Specification
Unit
Min Typ Max
Condition
General Performance
V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω
Power Gain
Slope^[1]
37.8 38.3 38.6 dB f = 5MHz
37.6 38.3
dB f = 100MHz
-0.2
0
0.5 dB
Flatness of Frequency Response
Input Return Loss
20.0
±0.3 dB
f = 5MHz to 100MHz
dB
Output Return Loss
20.0
dB
Noise Figure
3.8
4.2 dB f = 100MHz
Total Current Consumption (DC)
150.0 158.0 160.0 mA
Distortion Data 5MHz to 100MHz
CTB
XMOD
CSO
V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω
-72 dBc 7 ch flat; VO = 50dBmV^[2]
-69 dBc 12 ch flat; VO = 50dBmV^[3]
-64
dB 7 ch flat; VO = 50dBmV^[2]
-61
dB 12 ch flat; VO = 50dBmV^[3]
-70 dBc 7 ch flat; VO = 50dBmV^[2]
-68 dBc 12 ch flat; VO = 50dBmV^[3]
d2
-70 dBc [4]
STB
-72 dB [5]
1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
2. 7 channels, US frequency raster: T7 - T13 (7.0MHz to 43.0MHz), +50dBmV flat output level.
3. 12 channels, US frequency raster: T7 - T13 (7.0MHz to 43.0MHz), 2 - 6 (55.25MHz to 83.25MHz), +50dBmV flat output level.
4. f1 = 7MHz; V1 = 50dBmV; f2 = 25MHz; V2 = 50dBmV; fTEST = f1 + f2 = 32MHz.
5. f1 = 13MHz; V1 = 50dBmV; f2 = 25MHz; V2 = V1; f3 = 7MHz; V3 = V1; fTEST = f1 + f2 - f3 = 31MHz.
Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA.
Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA.
Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the
carrier being tested.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS140307
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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