RFPD2540 Datasheet, PDF (2/3 Pages) RF Micro Devices – GaAs/GaN Power Doubler Hybrid 45MHz to 1218MHz

RFPD2540
Nominal Operating Parameters
Parameter
Specification
Unit
Min Typ Max
Condition
General Performance
V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω
Power Gain
Slope^[1]
27.0
dB f = 45MHz
27.5 28.0 29.0 dB f = 1218MHz
0.5
1.0 2.0 dB f = 45MHz to 1218MHz
Flatness of Frequency Response
0.8 dB f = 45MHz to 1218MHz
Input Return Loss
-20
dB f = 45MHz to 320MHz
-19
dB f = 320MHz to 640MHz
-17
dB f = 640MHz to 870MHz
-16
dB f = 870MHz to 1000MHz
-15
dB f = 1000MHz to 1218MHz
Output Return Loss
-20
dB f = 45MHz to 320MHz
-19
dB f = 320MHz to 640MHz
-18
dB f = 640MHz to 870MHz
-17
dB f = 870MHz to 1000MHz
-16
dB f = 1000MHz to 1218MHz
Noise Figure
5.0 5.5 dB f = 50MHz to 1218MHz
Total Current Consumption (DC)
420.0 450.0 mA
Distortion Data 40MHz to 550MHz
V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω
CTB
-75 -70 dBc
XMOD
CSO
-68
-62 dBc _{VO = 56.4dBmV at 1000MHz, 13.4dB extrapolated tilt, 79 analog}
-70
-65
dBc ^{channels plus 75 digital channels (-6dB offset)[2][4]}
CIN
60
65
dB
Distortion Data 40MHz to 550MHz
V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω
CTB
-82
dBc
XMOD
CSO
-75
dBc _{VO = 55dBmV at 1200MHz, 16.5dB extrapolated tilt, 79 analog channels}
-80
dBc ^{plus 111 digital channels (-6dB offset)[3][4]}
CIN
60
dB
1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
2. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +43dBmV to +50dBmV tilted output level, plus 75 digital channels, -6dB offset
relative to the equivalent analog carrier.
3. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +38.5dBmV to +45.5dBmV tilted output level, plus 111 digital channels, -6dB
offset relative to the equivalent analog carrier.
4. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Composite Triple Beat (CTB) - The
CTB parameter is defined by the NCTA. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method),
referenced to 100% modulation of the carrier being tested. Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test
procedure for carrier to noise).
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS140922
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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