RFPA3807 Datasheet, PDF (2/10 Pages) RF Micro Devices – GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER

RFPA3807
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (V_CC and V_BIAS)
6.5
V
Reference Current (I_REF)
5
mA
DC Supply Current (I_C)
256
mA
CW Input Power, 2:1 Output VSWR
23
dBm
Output Load VSWR at P3dB
5:1
Operating Junction Temperature
160
°C
Operating Temperature Range (T_L)
-40 to +85
°C
Storage Temperature
-55 to +150
°C
ESD Rating: Human Body Model
Class 1B
Moisture Sensitvity Level
MSL 2
Notes: 1. The maximum ratings must all be met simultaneously.
2. Pdiss = P_DC+P_RFIN-P_RFOUT
3. T_J=T_L+Pdiss*Rth
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
860MHz to 960MHz
Frequency
Input Power (P_IN)
Gain (S21)
OIP3
P1dB
Efficiency at P3dB
Input Return Loss (S11)
Output Return Loss (S22)
Noise Figure
WCDMA Ch Power at -65dBc ACPR
WCDMA Ch Power at -55dBc ACPR
UMTS2100
Frequency
Input Power (P_IN)
Gain (S21)
OIP3
P1dB
Efficiency at P3dB
Input Return Loss (S11)
Output Return Loss (S22)
Noise Figure
WCDMA Ch Power at -65dBc ACPR
WCDMA Ch Power at -55dBc ACPR
Power Supply
Operating Current (Quiescent)
Operating Voltage (V_CC)
Thermal Resistance (R_TH)
Power Down Current
Min.
860
2110
80
Specification
Typ.
15.8
43
25
58
18
11
3.5
12.9
14.6
2140
13.7
42
24
56
15
13.5
2.9
11.5
13.2
90
5.0
95
Max.
960
15
2170
15
115
6.0
20
Unit
MHz
dBm
dB
dBm
dBm
%
dB
dB
dB
dBm
dBm
MHz
dBm
dB
dBm
dBm
%
dB
dB
dB
dBm
dBm
Condition
V_CC=5.0V, V_BIAS=5.0V, I_CQ=90mA
Tuned for 880MHz useful to 960MHz
V_CC<6.0V, max recommended
12dBm/tone, tone spacing=1MHz
At P3dB
869MHz to 894MHz band
869MHz to 894MHz band
3GPP 3.5, Test Model 1, 64 DPCH
3GPP 3.5, Test Model 1, 64 DPCH
V_CC=5.0V, V_BIAS=5.0V, I_CQ=90mA
V_CC<6.0V, max recommended
12dBm/tone, tone spacing=1MHz
At P3dB
3GPP 3.5, Test Model 1, 64 DPCH
3GPP 3.5, Test Model 1, 64 DPCH
mA
At V_CC=5.0V
V
Max recommended collector voltage
C/W
At quiescent current, no RF
A
At V_REF=0V
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