RFPA3800 Datasheet, PDF (2/12 Pages) RF Micro Devices – GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER

RFPA3800
Absolute Maximum Ratings
Parameter
Supply Voltage (V_CC and V_BIAS) >300MHz
Supply Voltage (V_CC and V_BIAS) <300MHz
Reference Current (I_REF)
DC Supply Current (I_C)
CW Input Power, 2:1 Output VSWR
CW Input Power, 5:1 Output VSWR
Output Load VSWR at P3db
Operating Junction Temperature
Operating Temperature Range (T_L)
Storage Temperature
ESD Rating: Human Body Model
Moisture Sensitvity Level
Rating
7.5
5.5
10
2300
28
20
5:1
160
-40 to +85
-55 to +150
Class 1B
MSL 2
Unit
V
V
mA
mA
dBm
dBm
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
460 MHz
Frequency
Input Power (P_IN)
Gain (S21)
OIP3
P1dB
Efficiency at P3dB
Input Return Loss (S11)
Output Return Loss (S22)
Noise Figure
WCDMA Ch Power at -65dBc ACPR
WCDMA Ch Power at -55dBc ACPR
945 MHz
Frequency
Input Power (P_IN)
Gain (S21)
OIP3
P1dB
Efficiency at P3dB
Input Return Loss (S11)
Output Return Loss (S22)
Noise Figure
WCDMA Ch Power at -65dBc ACPR
WCDMA Ch Power at -55dBc ACPR
Power Supply
Operating Current (Quiescent)
Operating Voltage (V_CC)
Thermal Resistance (R_TH)
Power Down Current
Specification
Min.
Typ.
Max.
450
460
470
23
18
48
36.7
50
15
9
5
19.5
24.5
920
940
960
26
12
13.5
15.0
48
36
45
13
10
4
19.5
24.5
500
650
700
7.0
7.5
11.5
20
Unit
MHz
dBm
dB
dBm
dBm
%
dB
dB
dB
dBm
dBm
MHz
dBm
dB
dBm
dBm
%
dB
dB
dB
dBm
dBm
Condition
V_CC=7.0V, V_BIAS=7.0V, I_CQ=650mA
EVB tuned for linear operation
V_CC<7.5V, load VSWR<2:1
20dBm/tone, tone spacing=1MHz
EVB tuned for linear operation
At P3dB, EVB tuned for linear operation
3GPP 3.5, Test Model 1, 64 DPCH
3GPP 3.5, Test Model 1, 64 DPCH
V_CC=7.0V, V_BIAS=7.0V, I_CQ=650mA
EVB tuned for linear operation
V_CC<7.5V, load VSWR<2:1
945 MHz
20dBm/tone, tone spacing=1MHz
EVB tuned for linear operation
At P3dB, EVB tuned for linear operation
3GPP 3.5, Test Model 1, 64 DPCH
3GPP 3.5, Test Model 1, 64 DPCH
mA
At V_CC=7.0V
V
Max recommended collector voltage
C/W
At quiescent current, no RF
A
At V_REF=0V.
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