RFHA1000 Datasheet, PDF (2/11 Pages) RF Micro Devices – 50MHz TO 1000MHz, 15W GaN WIDEBAND

RFHA1000
Absolute Maximum Ratings
Parameter
Drain Voltage (V_D)
Gate Voltage (V_G)
Gate Current (I_G)
Operational Voltage
RF- Input Power
Ruggedness (VSWR)
Storage Temperature Range
Operating Temperature Range (T_L)
Operating Junction Temperature (T_J)
Human Body Model
Rating
150
-8 to +2
10
32
31
12:1
-55 to +125
-40 to +85
200
Class 1C
Unit
V
V
mA
V
dBm
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RoHS (Restriction of Hazardous Substances): Compliant per EU Directive
2002/95/EC.
MTTF (T_J < 200°C, 95% Confidence Limits)*
3 x 10⁶
Hours
Thermal Resistance, R_TH (junction to case)
6
°C/W
measured at T_C = 85°C, DC bias only
* MTTF - median time to failure for wear-out failure mode (30% I_DSS degradation) which is determined by the technology process reliability.
Refer to product qualification report for FIT(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage
and current must not exceed the maximum operating values specified in the table on page two.
Bias Conditions should also satisfy the following expression: P_DISS < (T_J - T_C)/R_TH J - C and T_C = T_CASE
Parameter
Recommended Operating
Conditions
Drain Voltage (V_DSQ)
Gate Voltage (V_GSQ)
Drain Bias Current
RF Input Power (P_IN)
Input Source VSWR
RF Performance
Characteristics
Frequency Range
Linear Gain
Power Gain
Gain Flatness
Gain Variation with Temperature
Input Return Loss (S₁₁)
Output Power (P_3dB)
Power Added Efficiency (PAE)
Specification
Min.
Typ.
Max.
28
32
-5
-3
-2
88
30
10:1
50
1000
17.5
14.5
3
-0.02
-10
41.5
60
Unit
Condition
V
V
mA
dBm
MHz
dB
dB
dB
dB/ °C
dB
dBm
%
Small signal 3dB bandwidth
P_OUT = 30dBm, 100MHz
P3DB, 100MHz
P_OUT = 30dBm, 50MHz to 1000MHz
50MHz to 1000MHz
50MHz to 1000MHz
2 of 11
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DS120418