RFDA2125 Datasheet, PDF (2/26 Pages) RF Micro Devices – Digital Controlled Variable Gain Amplifier 400MHz to 2700MHz, 6-Bit 0.5dB LSB Control

RFDA2125
rfmd.com
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
DC Supply Current
+5.5
VDC
300
mA
Power Dissipation
1.6
W
Max RF Input Power for 50Ω Output
Load
24
dBm
Operating Temperature (TCASE)
Storage Temperature
-40 to +85
°C
-40 to +150
°C
Junction Temperature
160
°C
ESD Rating (HBM)
1000 (Class 1C)
V
Moisture Sensitivity Level
MSL3
Note: Operation of this device beyond any one of these limits may cause
permanent damage. MTTF = 1E6 hours at 160°C junction temperature.
Parameter
Overall
Gain Control Range
Control Interface
Setting Time
Impedance
Total Supply Voltage
Total Supply Current
Thermal Resistance
Step Accuracy
728MHz to 746MHz
Max Gain
P1dB
Output IP3
ACPR
Gain Flatness
Noise Figure
Input Return Loss
Output Return Loss
Specification
Min.
Typ.
Max.
31.5
6
250
50
4.75
5.0
5.25
180
60.8
+/- (0.2+5% attenuation setting)
37
26
44
-67
0.1
3.9
15
11
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance
or functional operation of the device under Absolute Maximum Rating conditions is not
implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No license is
granted by implication or otherwise under any patent or patent rights of RFMD. RFMD
reserves the right to change component circuitry, recommended application circuitry and
specifications at any time without prior notice.
Unit
dB
bit
ns
Ω
V
mA
°C/W
dB
dB
dBm
dBm
dBc
dB
dB
dB
dB
Condition
Temperature=25°C, VCC= 5V, standard
application circuit
SPI interface
TON, TOFF (10%/90% RF)
Junction to backside of device
Temperature=25°C, VCC= 5V, standard
application circuit
Max gain
POUT=10dBm/tone, 1 MHz spacing, Max gain
WCDMA TM1 64DPCH 1C, Output power =
13dBm
Max gain
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DS130326