RFDA2015 Datasheet, PDF (2/10 Pages) RF Micro Devices – DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER

RFDA2015
Absolute Maximum Ratings
Parameter
Rating
Supply Voltage (V_CC, V_DD)
5.5
Collector Current (I_C)
200
Power Dissipation¹ (P_DISS)
750
RF Input Power
20
Operating Temperature (T_CASE)
Junction Temperature (T_J)
Storage Temperature
-40 to +85
150
-40 to +150
ESD Rating (HBM)
Class 1B
Moisture Sensitivity Level
MSL 3
Notes:
1. P_DISS=V_CC*I_C-RF Output Power+RF Input Power
Unit
V
mA
mW
dBm
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
Specification
Unit
Min.
Typ.
Max.
Frequency Range
500
2500
MHz
Gain (Max Gain State)
10.0
11.5
13.0
dB
Gain Control Range
31.5
dB
Step Accuracy
±(0.1 +5% attenuation setting)
dB
Output IP3
40
43
dBm
Output P1dB
23
25
dBm
Input Return Loss
17
dB
Output Return Loss
11
dB
Noise Figure
7
dB
t_RISE, t_FALL
Amplifier Supply Voltage (V_CC)
Attenuator Supply Voltage (V_DD)
Total Supply Current
4.75
3.30
90
200
5.00
5.00
115
ns
5.25
V
5.25
V
135
mA
Thermal Resistance
87
°C/W
Control Interface
6 Bit, Parallel
Control Voltages
Low, V_CTL=0 to 0.8 V_DC
V
High, V_CTL=2.0 to V_DD V_DC
Notes:
1. All measurements based on the 1800MHz to 2200MHz Application Circuit, T=25°C
2. V_CC=V_DD=+5V, V_CTL=0/5V
Condition
Attenuation=0dB, 2017MHz
0.5dB LSB, 6 bits
Major state max error
2017MHz, P_OUT=5dBm/tone, 1MHz spacing
Attenuation=0dB, 2017MHz
2017 MHz
2017 MHz
2017MHz, Attenuation=0dB
10/90% RF
Sum of currents from V_DD and V_CC
2 of 10
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