RFDA0057 Datasheet, PDF (2/11 Pages) RF Micro Devices – DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 400MHz TO 2700MHz

RFDA0057
Absolute Maximum Ratings
Parameter
Rating
Supply Voltage
+5.5
DS Supply Current
205
Power Dissipation
1100
Maximum Input RF Power
24
Operating Temperature (T_CASE)
Storage Temperature
-40 to +85
-40 to +150
Junction Temperature
165
ESD Rating (HBM)
1000 (Class 1C)
Moisture Sensitivity Level
MSL 3
MTTF = 1.0E6 hours at 165°C junction temperature
Unit
V_DC
mA
mW
dBm
°C
°C
°C
V
Parameter
Overall
Frequency
Max Gain
Gain Control Range
Step Accuracy
P1dB
Output IP3
Control Interface
Settling Time
Noise Figure
Channel-to-Channel Isolation
Impedance
Input Return Loss
Output Return Loss
Total Supply Voltage
Supply Current
Thermal Resistance
Specification
Min.
Typ.
Max.
400
2700
18.5
31.5
+/- (0.15+5% attenuation setting)
19
37
12
250
7
50
50
-15
-15
4.75
5.0
5.25
155
40
Unit
MHz
dB
dB
dB
dBm
dBm
bit
ns
dB
dB

dB
dB
V
mA
°C/W
Condition
Temp = 25°C, V_CC = V_DD = 5V, standard appli-
cation circuit
Attenuation = 0dB
Major state error up to 2700MHz
Attenuation = 0dB at 900MHz
P_OUT =0dBm/tone, 1MHz spacing at 900MHz
SPI interface
tON, tOFF (10%/90% RF)
Attenuation = 0dB
Input at RFIN1 (or RFIN2), the isolation
between two outputs
900MHz
900MHz
From V_CC_SPI, V_CC_AMP1 and V_CC_AMP2
Junction to backside of device
Typical RF Performance at Key Operating Frequencies
Parameter
Unit 700MHz 900MHz
Max Small Signal Gain
dB
18.5
18.5
Output P1dB
dBm
19
19
Output IP3^*
dBm
38
37
Noise Figure
dB
5.7
5.7
*Note: OIP3 is tested at P_OUT = 0dBm/Tone and 1MHz spacing
1700MHz
18
19
34.5
6.5
2300MHz
17.5
19
32.5
7
2500MHz
17.5
18.5
32
6.9
2700MHz
17.5
18.5
31.5
7.2
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DS140513