RFDA0056 Datasheet, PDF (2/10 Pages) RF Micro Devices – Digital Controlled Variable Gain Amplifier 300MHz to 1100MHz, 6-Bit 0.5dB LSB Control

RFDA0056
Absolute Maximum Ratings
Parameter
Supply Voltage
DC Supply Current
Power Dissipation
Max RF Input Power for 50
Output Load
Operating Temperature (T_CASE)
Storage Temperature
Junction Temperature
ESD Rating (HBM)
Moisture Sensitivity Level
Rating
5.5
330
1600
12
-40 to +85
-40 to +150
+172
500 (Class 1B)
MSL 3
Unit
V
mA
mW
dBm
°C
°C
°C
V
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Parameter
Overall
Frequency Range
Max Gain
Gain Control Range
Step Accuracy
P1dB
Output IP3
Control Interface
Settling Time
Noise Figure
Impedance
Input Return Loss
Output Return Loss
Total Supply Voltage
Supply Current
Thermal Resistance
Nominal Operating Parameters
Specification
Min.
Typ.
Max.
300
1100
36
31.5
±(0.15 +5% attenuation setting)
25
44
6
250
4.2
50
18
14.9
4.75
5.0
5.25
207
215
245
73
Unit
MHz
dB
dB
dB
dBm
dBm
bit
ns
dB

dB
dB
V
mA
°C/W
Condition
Temp = 25°C, V_CC= V_DD = 5V, standard appli-
cation circuit
Attenuation = 0dB, at 450MHz
Major state error up to 1100MHz
Attenuation = 0dB, at 450MHz
P_OUT = 5dBm/Tone, 1MHz spacing at 450MHz
SPI Interface
tON, tOFF (10%/90% RF)
Attenuation = 0dB
At 450MHz
From V_CC (SPI), V_CC (AMP1), and V_CC (AMP2)
Typical RF Performance at Key Operating Frequencies
Parameter Unit 350MHz 450MHz 550MHz
Max Small
dB
37.1
Signal Gain
36.8
36.3
Output P1dB dBm
25.1
25
24.3
Output IP3*
dBm
44.2
44.1
41.4
Input Return
dB
22.3
18
16
Loss
Output Return dB
9.8
14.4
27
Loss
*Note: OIP3 is tested at P_OUT = 5dBm/Tone and 1MHz spacing
700MHz
35.2
24.5
41.3
14.9
17.8
850MHz
34.1
24.3
41.6
16
14.2
900MHz
33.7
24.4
41.6
17.1
14.3
950MHz
33.3
24.5
41.9
17.9
15
1050MHz
32.6
24.4
42
18.3
17.2
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