RFDA0047 Datasheet, PDF (2/11 Pages) RF Micro Devices – DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 400MHZ TO 2700MHZ

RFDA0047
Absolute Maximum Ratings
Parameter
Rating
Supply Voltage
+5.5
DS Supply Current
205
Power Dissipation
1100
Maximum Input RF Power
24
Operating Temperature (T_CASE)
Storage Temperature
-40 to +85
-40 to +150
Junction Temperature
165
ESD Rating (HBM)
1000 (Class 1C)
Moisture Sensitivity Level
MSL 3
MTTF = 1.0E6 hours at 165°C junction temperature
Unit
V_DC
mA
mW
dBm
°C
°C
°C
V
Parameter
Overall
Frequency
Max Gain
Gain Control Range
Step Accuracy
P1dB
Output IP3
Control Interface
Settling Time
Noise Figure
Channel-to-Channel Isolation
Impedance
Input Return Loss
Output Return Loss
Total Supply Voltage
Supply Current
Thermal Resistance
Specification
Min. Typ. Max.
400
2700
13
31.5
+/- (0.15+5% attenuation setting)
19
39
12
250
7
50
50
-18
-18
4.75
5.0
5.25
170
40
Unit
MHz
dB
dB
dB
dBm
dBm
bit
ns
dB
dB

dB
dB
V
mA
°C/W
Condition
Temp=25°C, V_CC = V_DD = 5V, standard application circuit
Attenuation = 0dB
Major state error up to 2700MHz
Attenuation = 0dB at 900MHz
P_OUT =0dBm/tone, 1MHz spacing at 900MHz
SPI interface
tON, tOFF (10%/90% RF)
Attenuation = 0dB
Input at RFIN1 (or RFIN2), the isolation between two
outputs
900MHz
900MHz
From V_CC_SPI, V_CC_AMP1 and V_CC_AMP2
Junction to backside of device
Parameter
Unit 680MHz 900MHz
Max Small Signal Gain
dB
13.5
13.5
Output P1dB
dBm
19
19
Output IP3^*
dBm
40
39.5
Noise Figure
dB
6.5
6.5
* Note: OIP3 is tested at P_OUT = 0dBm/Tone and 1MHz spacing
1700MHz
13.3
19
35
7
2300MHz
13
18
32.5
7.5
2550MHz
13
18
31.5
7.5
2700MHz
13
17.5
31
7.5
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DS140513