RFDA0026 Datasheet, PDF (2/13 Pages) RF Micro Devices – DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 700MHz TO 1035MHz, 6-BIT 0.5dB LSB CONTROL

RFDA0026
Absolute Maximum Ratings
Parameter
Rating
Supply Voltage (V_CC, V_DD)
5.5
DC Supply Current
300
Power Dissipation (P_DISS)
1500
Max RF Input Power
12
Operating Temperature (T_CASE)
Storage Temperature
-40 to +85
-40 to +150
Junction Temperature (T_J)
170
Human Body Model
1000 (Class 1C)
Moisture Sensitivity Level
MSL 3
Note: MTTF=1.7E6 hours at 170°C junction temperature.
Unit
V
mA
mW
dBm
°C
°C
°C
V
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RoHS (Restriction of Hazardous Substances): Compliant per EU Directive
2002/95/EC.
Parameter
Specification
Unit
Min.
Typ.
Max.
Overall
Frequency Range
Max Gain
Gain Control Range
Step Accuracy
P1dB
Output IP3
Control Interface
Settling Time
Noise Figure
Impedance
Input Return Loss
Output Return Loss
Total Supply Voltage
Supply Current
Thermal Resistance
700
1035
32
31.5
±(0.1 +5% attenuation setting)
23.8
40
6
250
4.1
50
-15
-11
4.75
5.0
5.25
192
46.2
MHz
dB
dB
dB
dBm
dBm
bit
ns
dB

dB
dB
V
mA
°C/W
Typical RF Performance at Key Operating Frequencies
Parameter
Unit _700MHz²
Max Small Signal Gain
dB
34.1
Output P1dB
dBm
24.0
Output IP3¹
dBm
40.7
Input Return Loss
dB
-13.2
Output Return Loss
dB
-12
Noise Figure
dB
4.0
Notes:
1. OIP3 is tested at P_OUT=+5dBm/Tone and 1 MHz spacing
2. Based on 650MHz to 850MHz Application Circuit
850MHz
33.4
23.8
39.4
-15.7
-10.1
4.0
Condition
Temp=25°C, V_CC=V_DD =5V, standard applica-
tion circuit
Attenuation = 0dB
Major state error up to 1035MHz
Attenuation = 0dB
P_OUT=5dBm/tone, 1MHz spacing
SPI interface
tON, tOFF (10%/90% RF)
Attenuation = 0dB
From V_CC_SPI, V_CC_AMP1 and V_CC_AMP2
Junction to backside of device
900MHz
33.2
23.8
40.2
-17.1
-10.3
4.1
970MHz
33.0
23.7
41.1
-18.6
-10.2
4.0
1040MHz
32.5
23.7
41.6
-19.8
-10.1
4.1
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