RFDA0015 Datasheet, PDF (2/10 Pages) RF Micro Devices – DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER

RFDA0015
Absolute Maximum Ratings
Parameter
Rating
Supply Voltage (V_CC, V_DD)
5.5
Collector Current (I_C)
115
Power Dissipation
630
Input RF Power
+20
Operating Temperature (T_CASE)
Storage Temperature
-40 to +85
-40 to +150
Junction Temperature (T_J)
+150
ESD Rating (HBM)
Class 1B
Moisture Sensitivity Level
MSL 3
Notes:
1. P_DISS=V_CC*I_C-RF Output Power+RF Input Power
Unit
V
mA
mW
dBm
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
Specification
Unit
Min.
Typ.
Max.
Frequency
50
850
MHz
Gain - 150MHz (Max Gain State)
18.7
dB
Gain - 850MHz (Max Gain State)
16.2
17.7
19.2
dB
Gain Control Range
31.5
dB
Step Accuracy
±(0.1 +5% attenuation setting)
dB
Output IP3 - 150MHz
42
dBm
Output IP3 - 850MHz
33
35
dBm
Output P1dB
17
20
dBm
Input Return Loss
20
dB
Output Return Loss
25
dB
Noise Figure
4.7
dB
t_RISE, t_FALL
200
ns
Amplifier Supply Voltage (V_CC)
4.75
5
5.25
V
Attenuator Supply Voltage (V_DD)
3.3
5
5.25
V
Total Supply Current
80
90
100
mA
Thermal Resistance
57
°C/W
Control Interface
6 Bit, Parallel
Control Voltages
Low, V_CTL=0 to 0.8 V_DC
High, V_CTL=2.0 to V_DD V_DC
Notes:
1. All measurements based on the 50MHz to 850MHz Application Circuit, T=25°C
2. V_CC=V_DD=+5V, V_CTL=0/5V
Condition
Attenuation=0dB, 150MHz
Attenuation=0dB, 850MHz
0.5dB LSB, 6 bits
Major state max error
150MHz, P_OUT=0dBm/tone, 1MHz spacing
850MHz, P_OUT=0dBm/tone, 1MHz spacing
Attenuation = 0 dB
150 MHz
150 MHz
150MHz, Attenuation=0dB
10/90% RF
Sum of currents from V_DD and V_CC
2 of 10
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DS120817