RF5110 Datasheet, PDF (2/12 Pages) RF Micro Devices – 3V GSM POWER AMPLIFIER

RF5110
Absolute Maximum Ratings
Parameter
Supply Voltage
Power Control Voltage (V_APC1,2)
DC Supply Current
Input RF Power
Duty Cycle at Max Power
Output Load VSWR
Operating Case Temperature
Storage Temperature
Rating
-0.5 to +6.0
-0.5 to +3.0
2400
+13
50
10:1
-40 to +85
-55 to +150
Unit
V_DC
V
mA
dBm
%
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Overall
Operating Frequency Range
Usable Frequency Range
Maximum Output Power
Total Efficiency
Input Power for Max Output
Output Noise Power
Specification
Min.
Typ.
Max.
880 to 915
800 to 950
33.8
34.5
33.1
50
57
12
5
+4.5
+7.0
+9.5
-72
-81
Forward Isolation
Second Harmonic
Third Harmonic
All Other Non-Harmonic
Spurious
Input Impedance
Optimum Source Impedance
Input VSWR
Output Load VSWR
Stability 8:1
Ruggedness 10:1
Output Load Impedance
Power Control V_APC1 V_APC2
Power Control “ON”
2.6
Power Control “OFF”
0.2
Power Control Range
75
Gain Control Slope
5
APC Input Capacitance
APC Input Current
Turn On/Off Time
2-2
-20
-25
50
40 + j10
2.6 - j1.5
0.5
100
4.5
-22
-7
-7
-36
2.5:1
4:1
150
10
5
25
100
Unit
MHz
MHz
dBm
dBm
%
%
%
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Ω
Ω
Ω
V
V
dB
dB/V
pF
mA
μA
ns
Condition
Temp=25°C, V_CC=3.6V, V_APC1,2=2.8V,
P_IN=+4.5dBm, Freq=880MHz to 915MHz,
37.5% Duty Cycle, pulse width=1731μs
See evaluation board schematic.
Using different evaluation board tune.
Temp=25°C, V_CC=3.6V, V_APC1,2=2.8V
Temp=+60°C, V_CC=3.3V, V_APC1,2=2.8V
At P_OUT,MAX, V_CC=3.6V
P_OUT = +20 dBm
P_OUT = +10 dBm
RBW=100kHz, 925MHz to 935MHz,
P_OUT,MIN< P_OUT < P_OUT,MAX,
P_IN,MIN<P_IN <P_IN,MAX, V_CC =3.3V to 5.0V
RBW=100kHz, 935MHz to 960MHz,
P_OUT,MIN< P_OUT < P_OUT,MAX,
P_IN,MIN<P_IN <P_IN,MAX, V_CC =3.3V to 5.0V
V_APC1,2=0.3V, P_IN=+9.5dBm
P_IN = +9.5 dBm
P_IN = +9.5 dBm
For best noise performance
P_OUT,MAX-5dB< P_OUT< P_OUT,MAX
P_OUT < P_{OUT, MAX}-5 dB
Spurious<-36dBm, V_APC1,2=0.3V to 2.6V,
RBW = 100 kHz
No damage
Load Impedance presented at RF OUT pad
Maximum P_OUT, Voltage supplied to the
input
Minimum P_OUT, Voltage supplied to the input
V_APC1,2=0.2V to 2.6V
P_OUT=-10dBm to +35dBm
DC to 2MHz
V_APC1,2 = 2.8 V
V_APC1,2 = 0 V
V_APC1,2=0 to 2.8V
Rev A0 050318